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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28647

Title: Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
Authors: Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Jung-Hui Tsai;Wen-Chau Liu
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2006
Issue Date: 2011-10-21T02:38:48Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract:In this paper, an interesting thermally stable In0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. Good dc and RF characteristics are obtained by precisely depositing gold (Au) upon the In0.42Al0.58As barrier layer as the Schottky contact metal. For a MHEMT with gate dimensions of 1 × 100 µm2, high gate–drain breakdown voltage, high turn-on voltage, low gate leakage current density, high maximum transconductance with broad operating regime and low output conductance are obtained even at ambient temperatures up to 510 K (240 °C). The studied device also shows a very good microwave performance at room temperature. Moreover, the relatively low variations of the device performance are achieved over a wide temperature range (from 300 to 510 K). Therefore, the studied device has a good thermally stable performance that is suitable for high-speed and high-power electronic applications.
Relation: 21(9), pp.1358-1363
URI: http://ntour.ntou.edu.tw/handle/987654321/28647
Appears in Collections:[電機工程學系] 期刊論文

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