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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28644

Title: Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots
Authors: C.H. Chan;Y. S. Huang;J. S. Wang;K. K. Tiong
Contributors: NTOU:Department of Electrical Engineering
Date: 2007
Issue Date: 2011-10-21T02:38:46Z
Publisher: Optics Express
Abstract: Abstract:The surface photovoltage (SPV) spectra of a series of vertically stacked self-organized InAs/GaAs quantum dot (QD)-based laser structures with different spacer layer (SL) thickness were obtained as a function of temperature (77 K ≤ T ≤ 300 K). A decrease of the compressive stress for thinner SL samples arising from coherent relaxation enables us to designate the effect of material intermixing as the most probable mechanism of the energetic blueshift of the observed structures. The turnaround characteristic of the temperature-dependent spectral intensity shows that the reduced SPV signal at higher temperature is limited by the carrier scattering and at lower temperature it is governed by the magnitude of built-in electric field and the escape efficiency of the photogenerated carriers. The dot states to be blueshifted by material intermixing are expected to have higher escape rate for carriers out of QDs, thus resulting in lower measurable temperature for the detected SPV signal. The relatively higher signal at low temperature for the 10 nm SL sample provides a direct evidence of the tunneling process of carriers in the stacked QD layers.
Relation: 15(4), pp.1898-1906
URI: http://ntour.ntou.edu.tw/handle/987654321/28644
Appears in Collections:[電機工程學系] 期刊論文

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