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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28638

Title: The electrical and optical anisotropy of rhenium-doped WSe2 single crystals
Authors: Sheng-Yao Hu;M. C. Cheng;Kwong-Kau Tiong;Yii-Shing Huang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2005
Issue Date: 2011-10-21T02:38:43Z
Publisher: Journal of Physics: Condensed Matter
Abstract: Abstract:Single crystals of rhenium-doped WSe2 with large edge plane have been grown by the chemical vapour transport method using bromine as the transporting agent. From the x-ray diffraction patterns, both the doped and undoped crystals are found to crystallize in the 2H structure. The role of rhenium in affecting both the electrical and optical properties of the WSe2 crystals is examined. The thicker Re-doped WSe2 samples enable easier exploration of the electrical and optical anisotropies of the materials both parallel and perpendicular to the crystal c-axis. The samples are n-type in nature from Hall measurements and the conductivity anisotropy decreases drastically as a result of doping. Photovoltage measurements revealed that both undoped and Re-doped WSe2 are indirect semiconductors. The indirect band gap of the doped sample showed considerable red shift compared with the undoped sample and also exhibited anisotropy along and perpendicular to the c-axis. The anisotropy in the band gap is attributed to crystal anisotropy, which was also studied via the polarization-dependent electrolyte electroreflectance measurements taken along the van der Waals plane (; ) and the as-grown edge plane (, ; ). The strong dependence of excitonic transitions A and B on polarization compared with that of the undoped samples.
Relation: 17(23), pp.3575
URI: http://ntour.ntou.edu.tw/handle/987654321/28638
Appears in Collections:[水產養殖學系] 期刊論文
[電機工程學系] 期刊論文
[通訊與導航工程學系] 期刊論文

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