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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28635

Title: The Work Function Improvement on Indium−Tin−Oxide Epitaxial Layers by Doping Treatment for Organic Light-Emitting Device Applications
Authors: Jyh-Jier Ho;Chin-Ying Chen;Robert Y. Hsiao;Olivia L. Ho
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: High work function (HWF);indium tin oxide (ITO);organic light-emitting device (OLED);electro-luminescence (EL) performance.
Date: 2007
Issue Date: 2011-10-21T02:38:42Z
Publisher: The Journal of Physical Chemistry C
Abstract: In this paper, we present an approach to coating the thin high work function (HWF, with qm in eV) films on an indium tin oxide (ITO)/ glass substrate. Thin HWF films are co-sputtered on an ITO using the vanadium (V+4-ion) dopant concentrations from 0% to 12.25%, and the qm-values are increased from 4.80 eV to 5.25 eV, respectively. The HWF-ITO deposition condition is developed for organic light-emitting device (OLED) applications. The electro-luminescence (EL) improvement, in particular the turn-on voltage from 7.7 V to 0.3 V, is well correlated with the work function change. The output luminance (in cd/m2) at 10-V driving voltage of the developed OLED is increased from 35K cd/m2 (at 5% V+4-ion concentrations) to 75K cd/m2 (at 5% V+4-ion concentrations). These EL results with the HWF-ITO film are well above the OLED application standard.
Relation: 111(23), pp.8372-8376
URI: http://ntour.ntou.edu.tw/handle/987654321/28635
Appears in Collections:[電機工程學系] 期刊論文

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