National Taiwan Ocean University Institutional Repository:Item 987654321/28633
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题名: Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates
作者: H P Hsu;P Y Wu;Y S Huang;S Sanorpim;K K Tiong;R Katayama;K Onabe
贡献者: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
日期: 2007
上传时间: 2011-10-21T02:38:40Z
出版者: Journal of Physics: Condensed Matter
摘要: Abstract:In0.176Ga0.824P1−yNy (y = 1.5%–8.7%) alloys grown on GaP(001) substrates via metalorganic vapour phase epitaxy were characterized by surface photovoltage spectroscopy (SPS) in the temperature range between 125 and 400 K. The band gap energies are determined and their temperature dependences are analysed by Varshni and Bose–Einstein expressions. The parameters that describe the temperature variations of the band gap energies are evaluated and discussed. The surface photovoltage spectra also revealed that a transition from indirect to direct band gap is taking place for the N-incorporated samples and the quadratic correction for the band gap bowing is only applicable for low nitrogen containing samples.
關聯: 19(9), pp.6009
URI: http://ntour.ntou.edu.tw/handle/987654321/28633
显示于类别:[電機工程學系] 期刊論文

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