English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27273/39116
Visitors : 2440924      Online Users : 45
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28631

Title: Temperature dependence of absorption edge anisotropy in 2H- MoSe2 layered semiconductors
Authors: S.Y.Hu;Y.C.Lee;J.L.Shen;K.W.Chen;K.K.Tiong;Y.S.Huang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: A. Semiconductors;D. Photoconductivity
Date: 2006-07
Issue Date: 2011-10-21T02:38:39Z
Publisher: Solid State Communications
Abstract: Abstract:The absorption-edge anisotropy of 2H- MoSe2 was studied by photoconductivity (PC) measurements as a function of temperature in the range of 12–300 K. A significant shift towards lower energies has been observed in the PC spectra on the edge plane with respect to those corresponding to the van der Waals (VdW) plane. The parameters that describe the temperature dependence of the absorption edges are evaluated by the Bose–Einstein empirical expression. Effective phonon energy was estimated from the temperature dependence of the Urbach energy. The estimated effective phonon energy for the VdW and edge planes, respectively, can be correlated to the observed Raman active and modes.
Relation: 139(4), pp.176-180
URI: http://ntour.ntou.edu.tw/handle/987654321/28631
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

There are no files associated with this item.



All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback