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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28630

Title: Temperature dependence anisotropic photoconductivity in 2H-MoSe2 single crystals
Authors: Y.C. Lee;S.Y. Hu;K.K. Tiong;J.L. Shen;K.W. Chen;Y.S. Huang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: Semiconductor;Anisotropy
Date: 2008-01-10
Issue Date: 2011-10-21T02:38:38Z
Publisher: Journal of Alloys and Compounds
Abstract: Abstract:Single crystals of 2H-MoSe2 were investigated by the anisotropic photoconductivity (PC) measurements as a function of temperature in the range of 12–300 K. A significant shift towards lower energy has been observed in the PC spectra of the edge plane with respect to the van der Waals plane. The anisotropy in the indirect energy gap is being attributed to crystal anisotropy. The parameters that describe the temperature dependence of the anisotropic indirect energy gap are evaluated and discussed utilizing the Varshni and Manoogian–Woolley semi-empirical relationships. The Debye temperature of the sample has also been estimated by the fitted values.
Relation: 448(1-2),pp.44-48
URI: http://ntour.ntou.edu.tw/handle/987654321/28630
Appears in Collections:[電機工程學系] 期刊論文

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