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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28623

Title: Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment
Authors: Wei-Tien Chen;Hon-Rung Chen;Shao-Yen Chiu;Meng-Kai Hsu;Jung-Hui Tsai;Wen-Shiung Lour
Contributors: NTOU:Department of Electrical Engineering
Keywords: indium compounds;gallium compounds;gallium arsenide;III-V semiconductors;semiconductor heterojunctions;phototransistors;surface treatment;dark conductivity
Date: 2011
Issue Date: 2011-10-21T02:38:34Z
Publisher: Journal of The Electrochemical Society
Abstract: Abstract:Temperature-dependent dark and optical characteristics of the InGaP/GaAs heterojunction phototransistors (HPTs) with and without sulfur treatment are studied. As compared to the HPT without (NH4)2S treatment (HPT A), treatment at 50°C for 20 min leads to a reduced p-i-n dark current (Idark) and a reduced collector dark current (ICdark) for the HPT (HPT D) in the emitter-floated and base-floated configurations, respectively. Moreover, the effective reduction of the surface defects also induces an enhanced p-i-n photocurrent (Iph). The enhanced Iph combined with the promoted dc current gain results in an enhanced optical gain (G) and signal-to-noise ratio (SNR). For HPT A (D) under Pin=107.6 nW at 298 K, the G is 1.42 (20.3) while the SNR is 42 (94) dB. Experimental results indicate that the treated HPTs, compared to the untreated one, are more sensitive to low-power illumination.
Relation: 154(7), pp.H552-H556
URI: http://ntour.ntou.edu.tw/handle/987654321/28623
Appears in Collections:[電機工程學系] 期刊論文

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