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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28622

Title: Power Effects in Indium-Zinc Oxide Thin Films for OLEDs on Flexible Applications
Authors: Jyh-Jier Ho;Chin-Ying Chen
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: indium compounds;zinc compounds;thin films;transparency;conducting materials;sputter deposition;ion beam assisted deposition;annealing;surface roughness;Hall mobility;energy gap;electroluminescence;organic light emitting diodes
Date: 2004
Issue Date: 2011-10-21T02:38:34Z
Publisher: Journal of The Electrochemical Society
Abstract: Abstract:In this paper, transparent conducting indium-zinc oxide (IZO) films have been grown on a hard polycarbonate (HPC) substrate without postdeposition annealing treatment. The electrical, optical, and structural properties of these prepared films are investigated by different dc sputtering powers, such as 50, 80, and 100 W/cm2, with/without the ion-assisted deposition (IAD) technique. An optimal IZO deposition condition is developed for flexible organic light-emitting device (OLED) applications. The IZO films grown at low temperature (~50°C) with dc magnetron sputtering (100 W power) and the IAD technique were used to study the electroluminescence (EL) performance of the OLEDs. The EL results are better than those that are measured with commercial indium-tin oxide anodes and well above the electro-optical application standard. ©2004 The Electrochemical Society. All rights reserved.
Relation: 152(1), pp.G57-G61
URI: http://ntour.ntou.edu.tw/handle/987654321/28622
Appears in Collections:[電機工程學系] 期刊論文

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