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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28615

Title: Photoluminescence and electromodulation spectroscopy characterization of a Zn0.81Be0.04Mg0.15Se mixed crystal
Authors: P. J. Huang;H. P. Hsu;Y. S. Huang;F. Firszt;S. Łęgowski;H. Męczyńska;A. Marasek;K. K. Tiong
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: beryllium compounds;critical points;deep levels;electroreflectance;energy gap;excitons;II-VI semiconductors;magnesium compounds;photoluminescence;photoreflectance;spin-orbit interactions;zinc compounds
Date: 2007
Issue Date: 2011-10-21T02:38:31Z
Publisher: Journal of Applied Physics
Abstract: Abstract:We present an optical characterization of a Bridgman-grown zinc-blende-type Zn0.81Be0.04Mg0.15Se mixed crystal in the near-band-edge interband transitions using temperature-dependent photoluminescence (PL), contactless electroreflectance (CER), and photoreflectance (PR) in the temperature range of 15–400 K. Typical PL spectrum at low temperature consists of an exciton line, an edge emission due to recombination of shallow donor-acceptor pairs, and a broad band related to recombination through deep level defects. Interband transitions, originating from the band edge and spin-orbital splitting critical points of the sample, have been observed in the CER/PR spectra. The peak positions of the excitonic emission lines in the PL spectra correspond quite well to the energies of the fundamental transitions determined from electromodulation data. The parameters that describe the temperature dependence of the fundamental and spin split-off band gaps, and the broadening function of the band edge exciton are evaluated and discussed.
Relation: 102(8), pp.3515-3519
URI: http://ntour.ntou.edu.tw/handle/987654321/28615
Appears in Collections:[電機工程學系] 期刊論文

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