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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28614

Title: Photoluminescence and contactless electroreflectance characterization of BexCd1−xSe alloys
Authors: P J Huang;Y S Huang;F Firszt;H Męczyńska;O Maksimov;M C Tamargo;K K Tiong
Contributors: NTOU:Department of Electrical Engineering
Date: 2007
Issue Date: 2011-10-21T02:38:30Z
Publisher: Journal of Physics: Condensed Matter
Abstract: Abstract:A detailed optical characterization of a Bridgman-grown wurtzite- (WZ-) type Be0.075Cd0.925Se mixed crystal and three zinc-blende (ZB) BexCd1−xSe epilayers grown by MBE on InP substrates has been carried out via photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 15–400 K. The PL spectrum of the WZ-BeCdSe at low temperature consists of an exciton line, an edge emission feature due to recombination of donor–acceptor pairs, and a broad band related to recombination through deep-level defects, while the PL emission peaks of the ZB-BeCdSe epilayers show an asymmetric shape with a tail on the low-energy side. Various interband transitions, originating from the band edge and spin–orbit splitting critical points, of the samples have been observed in the CER spectra. The peak positions of the exciton emission lines in the PL spectra correspond quite well to the energies of the fundamental transitions determined from electromodulation data. The parameters that describe the temperature dependence of the fundamental and spin split-off bandgaps and the broadening function of the band-edge exciton are evaluated and discussed.
Relation: 19(2), pp.6208
URI: http://ntour.ntou.edu.tw/handle/987654321/28614
Appears in Collections:[電機工程學系] 期刊論文

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