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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28573

Title: Structural and luminescent property of gallium chalcogenides GaSe1−x S x layer compounds
Authors: C. H. Ho;S. T. Wang;Y. S. Huang;K. K. Tiong
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Date: 2009-0-01
Issue Date: 2011-10-21T02:38:12Z
Publisher: Journal of Materials Science: Materials in Electronics
Abstract: Abstract:Structural and luminescence properties of GaSe1−x S x (0 ≤ x ≤ 1) series optical materials have been studied by X-ray diffraction, photoluminescence (PL), and piezoreflectance (PzR) measurements. Powder X-ray diffraction patterns showed the whole series layers present three different kinds of stacking formula with respect to the compositional change of sulfur from x = 0 to x = 1. The comparison of PL and PzR spectra reveals that the GaSe1−x S x layers have three different kinds of stacking phase from x = 0 to x = 1. The PL results show the whole series GaSe1−x S x layers emit the luminescences from red to blue visible region. The PL and PzR spectra of the GaSe1−x S x are analyzed. The structural variation in between the layers is discussed.
Relation: 20(1), pp.207-210
URI: http://ntour.ntou.edu.tw/handle/987654321/28573
Appears in Collections:[電機工程學系] 期刊論文

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