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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28563

Title: Raman scattering characterization of vertical aligned 1D IrO2 nanocrystals grown on single crystal oxide substrates
Authors: Alexandru V. Korotcov;Ying-Sheng Huang;Dah-Shyang Tsai;Kwong-Kau Tiong
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: A. Nanostructures;C. Field emission scanning electron microscopy;E. Raman scattering.
Date: 2006-02
Issue Date: 2011-10-21T02:38:08Z
Publisher: Solid State Communications
Abstract: Abstract:Raman scattering (RS) has been used as a technique for characterization of IrO2 one dimensional (1D) nanocrystals (NCs) deposited on sapphire(100) and LiNbO3(100) substrates under various conditions. The IrO2 NCs were grown via metalorganic chemical vapor deposition method using (MeCp)(COD)Ir as the precursor and reactive magnetron sputtering using Ir metal target. The red-shifts and asymmetric broadening of the Raman lineshape for the NCs were analyzed by a modified spatial correlation (MSC) model, which includes the factor of stress induced shift. The proposed MSC model showed that the effects of stress and nanometric size can be separated in analyzing the observed Raman features. The usefulness of the experimental RS together with the MSC model analysis as a residual stress and structural characterization technique for 1D NCs has been demonstrated.
Relation: 137(6), pp.310-314
URI: http://ntour.ntou.edu.tw/handle/987654321/28563
Appears in Collections:[電機工程學系] 期刊論文

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