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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28555

Title: Observation of persistent photoconductivity in 2H‐MoSe2 layered semiconductors
Authors: Y. C. Lee;J. L. Shen;K. W. Chen;W. Z. Lee;S. Y. Hu;K. K. Tiong;Y. S. Huang
Contributors: NTOU:Department of Electrical Engineering
Keywords: molybdenum compounds;photoconductivity;semiconductor materials;energy gap
Date: 2006
Issue Date: 2011-10-21T02:38:05Z
Publisher: Journal of Applied Physics
Abstract: Abstract:We report the observation of persistent photoconductivity (PPC) effect in 2H‐MoSe2 layered semiconductors. The decay behavior of PPC can be well described by a stretch-exponential function. Experimental results indicate that the lattice relaxation of DX-like impurity is responsible for PPC in MoSe2. In addition, the small capture barrier created by lattice relaxation and the temperature-dependent resistance measurement exhibit that the magnitude of PPC effect in MoSe2 is small, consistent with the PPC behavior in indirect gap materials.
Relation: 99(6), pp.3706
URI: http://ntour.ntou.edu.tw/handle/987654321/28555
Appears in Collections:[電機工程學系] 期刊論文

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