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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28537

Title: Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors
Authors: Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: gallium arsenide;gallium compounds;aluminium compounds;III-V semiconductors;heterojunction bipolar transistors;semiconductor device models;surface recombination;passivation
Date: 2007
Issue Date: 2011-10-21T02:37:58Z
Publisher: Journal of The Electrochemical Society
Abstract: abstract:Double heterostructure-emitter bipolar transistors DHEBTs with emitter edge-thinning design and DHEBTs without that design have been investigated. In the characteristics modeling, a two-dimensional continuity equation and boundary conditions in the base region are employed to determine the various components of base current in a cylindrical mesa-type DHEBT. The influence of structure parameters and emitter edge-thinning design on the current gain of the DHEBT is studied. The effect of quasi-electric field in the base region is taken into account. Switching mechanisms in the DHEBT are also discussed. In the experimental measurement, a DHEBT with an exposed p+ -GaAs base surface exhibits a small offset voltage of 100 mV and a common-emitter current gain of 17. Due to the emitter edge-thinning to suppress the surface recombination current, a DHEBT with an N-AlGaAs passivated surface has a common-emitter current gain of 140 and a negligible offset voltage of 40 mV. With symmetric structures, both devices present bidirectional switching phenomena. Moreover, the emitter edge-thinning design is found having the capability for reducing the holding power in the switching. Possessing both amplifying and switching features, the DHEBTs show good potentials for circuit applications.
Relation: 154(4), pp.H283-H288
URI: http://ntour.ntou.edu.tw/handle/987654321/28537
Appears in Collections:[電機工程學系] 期刊論文

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