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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28536

Title: Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells
Authors: Yuang-Tung Cheng;Jyh-Jier Ho;William J. Lee;Song-Yeu Tsai;Yung-An Lu;Jia-Jhe Liou;Shun-Hsyung Chang;Kang L. Wang
Contributors: NTOU:Department of Electrical Engineering
Keywords: Multi-crystalline silicon;Plasma-enhanced chemical vapor deposited;Conversion efficiency;double layers;Minority carrier diffusion length.
Date: 2010
Issue Date: 2011-10-21T02:37:58Z
Publisher: Intenational Journal of Photoenergy
Abstract: abstract:The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells usingmulticrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of 125125mm2 were acid etched to produce simultaneously POCl3 emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4) coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc) is 616mV, short circuit current (Jsc) is 34.1mA/cm2, and minority carrier diffusion length is 474.16 ?m. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.
Relation: pp.1-6
URI: http://ntour.ntou.edu.tw/handle/987654321/28536
Appears in Collections:[電機工程學系] 期刊論文

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