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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28530

Title: Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaP–GaAs Heterojunction Bipolar Transistor
Authors: Shao-Yen Chiu;Jung-Hui Tsai;Hsuan-Wei Huang;Kun-Chieh Liang;Tzung-Min Tsai;Kuo-Yen Hsu;Wen-Shung Lour
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: Bipolar;InGaP–GaAs;Schottky diode;heterojunction;hydrogen sensor
Date: 2009-09
Issue Date: 2011-10-21T02:37:56Z
Publisher: IEEE Electron Device Letters
Abstract: Abstract:New hydrogen-sensing amplifiers are fabricated by integrating a GaAs Schottky-type hydrogen sensor and an InGaP-GaAs heterojunction bipolar transistor. Sensing collector currents (ICN and ICH) reflecting to N2 and hydrogen-containing gases are employed as output signals in common-emitter characteristics. Gummel-plot sensing characteristics with testing gases as inputs show a high sensing-collector-current gain (ICH/ICN) of > 3000. When operating in standby mode for in situ long-term detection, power consumption is smaller than 0.4 ??W. Furthermore, the room-temperature response time is 85 s for the integrated hydrogen-sensing amplifier fabricated with a bipolar-type structure.
Relation: 30(9), pp.898-900
URI: http://ntour.ntou.edu.tw/handle/987654321/28530
Appears in Collections:[電機工程學系] 期刊論文

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