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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28525

Title: Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment
Authors: Shao-Yen Chiu;Hon-Rung Chen;Wei-Tien Chen;Meng-Kai Hsu;Wen-Chau Liu;Jung-Hui Tsai;Wen-Shiung Lour
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Date: 2007
Issue Date: 2011-10-21T02:37:54Z
Publisher: Japanese Journal of Applied Physics
Abstract: Abstract:To investigate the effects of surface leakage on the temperature-dependent dark and optical performance of a heterojunction phototransistor (HPT), three sets of HPTs were prepared. They were unpassivated (HPT A), passivated with diluted (NH4)2S (HPT B), and passivated with neutralized (NH4)2S (HPT C). Passivation treatment successfully suppresses surface-defect-induced effects. The passivated HPTs exhibit a reduced dark current and an enhanced signal-to-noise ratio (SNR). HPT A exhibits a room-temperature collector dark current (ICdark) of 0.59 nA at a VCE of 1 V, while those of HPTs B and C are 0.03 and 0.89 pA, respectively. The room-temperature SNR values for HPTs A, B, and C at a Pin of 8.3 (107.6) nW are 5.9 (42), 59 (91), and 91 (122) dB, respectively. After a three-week air exposure, the room-temperature SNR at a Pin of 107.6 nW decreases to 25 (67) dB for HPT A (B), while it is 116 dB for HPT C. The decrease for HPT C is only 6 dB. A long-term stable passivation with good thermal stability has been achieved by neutralized (NH4)2S treatment.
Relation: 47, pp.35-42
URI: http://ntour.ntou.edu.tw/handle/987654321/28525
Appears in Collections:[電機工程學系] 期刊論文

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