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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28520

Title: High-Sensitivity Metal–Semiconductor–Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles
Authors: Shao-Yen Chiu;Hsuan-Wei Huang;Tze-Hsuan Huang;Kun-Chieh Liang;Kang-Ping Liu;Jung-Hui Tsai;Wen‐Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2008-12
Issue Date: 2011-10-21T02:37:53Z
Publisher: IEEE ELECTRON DEVICE LETTERS
Abstract: Abstract:New metal–semiconductor–metal hydrogen sensors are fabricated to take advantages of symmetrically bidirectional detection. Unlike commonly used single catalytic metal layers, a mixture of Pd and SiO2 inserted between Pd and GaN was employed as sensing media. There are three sensing regions (i.e., 2-D dipole, transient, and 3-D dipole regions) observed in static response. Room-temperature sensitivity larger than 107 was obtained in 1080-ppm H2/N2 ambient. The barrier-height variation is as high as 422 mV. To our best knowledge, these are the highest values ever reported. According to transient response, a short response time of 70 s is obtained at room temperature. Thus, a newly developed concept of forming 3-D dipoles is introduced to possibly explain experimental results.
Relation: 29(12), pp.1328-1331
URI: http://ntour.ntou.edu.tw/handle/987654321/28520
Appears in Collections:[電機工程學系] 期刊論文

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