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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28511

Title: In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide
Authors: C. H. Liang;K. K. Tiong;Y. S. Huang;D. Dumcenco;C. H. Ho
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Date: 2009-01-01
Issue Date: 2011-10-21T02:37:51Z
Publisher: Journal of Materials Science: Materials in Electronics
Abstract: Abstract:Au-doped ReS2 layer crystals were grown by chemical vapour method with iodine as the transport agent. Room temperature Hall effect measurement showed p-type semiconducting character for the doped sample. The electrical conductivities parallel and perpendicular to the crystal b-axis were investigated. The near band-edge temperature-dependent in-plane anisotropic optical properties were studied by the polarization-dependent photoconductivity measurements, with the incident light beam parallel and perpendicular to the crystal b-axis, in the temperature range from 20 to 300 K. The influence of Au in the measured conductivity anisotropy and photoconductivity spectra of doped ReS2 were analysed and discussed.
Relation: 20(1), pp.476-479
URI: http://ntour.ntou.edu.tw/handle/987654321/28511
Appears in Collections:[電機工程學系] 期刊論文

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