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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28510

Title: In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide
Authors: C. H. Liang;C. H. Chen;K. K. Tiong;D. Dmitry;Y. S. Huang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Date: 2009
Issue Date: 2011-10-21T02:37:51Z
Publisher: Second International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2007
Abstract: Au-doped ReS2 layer crystals were grown by chemical vapour method with iodine as the transport agent. Room temperature Hall effect measurement showed p-type semiconducting character for the doped sample. The electrical conductivities parallel and perpendicular to the crystal b-axis were investigated. The near band-edge temperature-dependent in-plane anisotropic optical properties were studied by the polarization-dependent photoconductivity measurements, with the incident light beam parallel and perpendicular to the crystal b-axis, in the temperature range from 20 to 300 K. The influence of Au in the measured conductivity anisotropy and photoconductivity spectra of doped ReS2 were analysed and discussed.
Relation: 2007(P054)
URI: http://ntour.ntou.edu.tw/handle/987654321/28510
Appears in Collections:[電機工程學系] 演講及研討會

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