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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28508

Title: Improved optical and structural properties of ZnO thin films by rapid thermal annealing
Authors: Yueh-Chien Lee;Sheng-Yao Hu;Walter Water;Ying-Sheng Huang;Min-De Yang;Ji-Lin Shen;Kwong-Kau Tiong;Chia-Chih Huang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: A. Semiconductors;D. Optical properties
Date: 2007-07
Issue Date: 2011-10-21T02:37:50Z
Publisher: Solid State Communications
Abstract: Abstract:The influence of rapid thermal annealing (RTA) on the optical and structural properties of ZnO thin films grown on Si substrate has been investigated by X-ray diffraction (XRD), photoluminescence (PL), and Raman scattering (RS) measurements. The relaxation of the residual stress by increasing the annealing temperature during the RTA process was observed by the measured shift of (002) XRD diffraction peak towards 34.40∘ and the shift of RS E2 (high) mode closer to 437 cm−1. The process also resulted in a reduction of the measured full-width at half maximum (FWHM) of the PL emission line and that of the asymmetrical broadening of RS E2 (high) mode. The observed changes have demonstrated that RTA is a viable technique for improving the crystalline quality of ZnO/Si films.
Relation: 143(4-5), pp.250-254
URI: http://ntour.ntou.edu.tw/handle/987654321/28508
Appears in Collections:[電機工程學系] 期刊論文

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