National Taiwan Ocean University Institutional Repository:Item 987654321/28494
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27454/39300
Visitors : 2535167      Online Users : 24
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Growth and characterization of well aligned densely packed IrO2 nanocrystals on sapphire via reactive sputtering
Authors: Alexandru Korotcov;Ying-Sheng Huang;Dah-Shyang Tsai;Kwong-Kau Tiong
Contributors: NTOU:Department of Electrical Engineering
Date: 2006
Issue Date: 2011-10-21T02:37:47Z
Publisher: Journal of Physics: Condensed Matter
Abstract: Abstract:Well aligned densely packed IrO2 nanocrystals (NCs) have been grown on sapphire (SA) substrates with different orientations by reactive magnetron sputtering using an Ir metal target. The surface morphology, structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. FESEM micrographs reveal that NCs with parallel in-plane alignment were gown on SA(001), vertically aligned NCs were grown on SA(100), while the NCs on SA(012) and SA(110) contained, respectively, single- and double-aligned directions with a tilt angle of ~35° from the normal to the substrates. The XRD results indicate that the NCs are (100), (001), and (101) oriented on SA(001), SA(001), and SA(012)/SA(110) substrates, respectively. A strong substrate effect on the alignment of the IrO2 NCs growth has been demonstrated and the probable mechanism for the formation of these NCs has been discussed. XPS analyses show the coexistence of higher oxidation states of iridium in the as-grown IrO2 NCs. The Raman spectra show the red-shift and asymmetric peak broadening with a low frequency tail of the IrO2 signatures with respect to that of the bulk counterpart, which are attributed to both the size and residual stress effects.
Relation: 18(4), pp.1121-1136
Appears in Collections:[Department of Electrical Engineering] Periodical Articles

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback