Loading...
|
Please use this identifier to cite or link to this item:
http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28490
|
| Title: | Growth and characterization of tungsten and molybdenum-doped ReSe2 single crystals |
| Authors: | Hu S. Y.;S. C. Lin;K. K. Tiong;P. C. Yen;Y. S. Huang;C. H. Ho |
| Contributors: | NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系 |
| Date: | 2005
|
| Issue Date: | 2011-10-21T02:37:46Z
|
| Publisher: | 14th International Conference on Solid Compounds of Transition Elements, Linz, Austria |
| Abstract: | Single crystals of W- and Mo-doped ReSe2 have been grown by chemical vapor transport (CVT) process with bromine as a transporting agent. The nominal doping concentration for tungsten is 0.5% while EDX measurement indicates a 4% doping concentration for molybdenum. Single crystalline platelets up to mm surface area and 100 μm in thickness were obtained. From the X-ray diffraction patterns, the doped crystals are found to crystallize in the triclinic-layered structure. The doping effects of the materials are characterized by temperature-dependent conductivity, optical absorption and piezoreflectance measurements. The activation energies for the impurity carriers decrease with doping. The indirect energy gaps of the doped samples show different red shifts for W- and Mo-doped samples. The direct band edge excitonic transition energies remain unchanged for W-doped samples, while for Mo-doped ReSe2 the transition energies shift toward lower energy locations. The broadening parameters of the excitonic transition features show small increase for W-doped ReSe2 due to impurity scattering, whereas for Mo-doped samples the transition features broadened significantly. The influence of the varying concentrations of the two dopants will be compared and discussed. |
| URI: | http://ntour.ntou.edu.tw/handle/987654321/28490 |
| Appears in Collections: | [電機工程學系] 演講及研討會
|
Files in This Item:
| File |
Description |
Size | Format | |
|---|
| index.html | | 0Kb | HTML | 151 | View/Open |
|
All items in NTOUR are protected by copyright, with all rights reserved.
|
