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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28490

Title: Growth and characterization of tungsten and molybdenum-doped ReSe2 single crystals
Authors: Hu S. Y.;S. C. Lin;K. K. Tiong;P. C. Yen;Y. S. Huang;C. H. Ho
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Date: 2005
Issue Date: 2011-10-21T02:37:46Z
Publisher: 14th International Conference on Solid Compounds of Transition Elements, Linz, Austria
Abstract: Single crystals of W- and Mo-doped ReSe2 have been grown by chemical vapor transport (CVT) process with bromine as a transporting agent. The nominal doping concentration for tungsten is 0.5% while EDX measurement indicates a 4% doping concentration for molybdenum. Single crystalline platelets up to mm surface area and 100 μm in thickness were obtained. From the X-ray diffraction patterns, the doped crystals are found to crystallize in the triclinic-layered structure. The doping effects of the materials are characterized by temperature-dependent conductivity, optical absorption and piezoreflectance measurements. The activation energies for the impurity carriers decrease with doping. The indirect energy gaps of the doped samples show different red shifts for W- and Mo-doped samples. The direct band edge excitonic transition energies remain unchanged for W-doped samples, while for Mo-doped ReSe2 the transition energies shift toward lower energy locations. The broadening parameters of the excitonic transition features show small increase for W-doped ReSe2 due to impurity scattering, whereas for Mo-doped samples the transition features broadened significantly. The influence of the varying concentrations of the two dopants will be compared and discussed.
URI: http://ntour.ntou.edu.tw/handle/987654321/28490
Appears in Collections:[電機工程學系] 演講及研討會

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