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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28461

Title: Efficiency Improved by H2 Forming Gas Treatment for Si-Based Solar Cell Applications
Authors: Yuang-Tung Cheng;Jyh-Jier Ho;William Lee;Song-Yeu Tsai;Liang-Yi Chen;Jia-Jhe Liou;Shun-Hsyung Chang;Huajun Shen;Kang L. Wang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: Photovoltaic (PV) effects;forming gas (FG);solar cell performance;conversion efficiency;internal quantum efficiency
Date: 2010
Issue Date: 2011-10-21T02:37:38Z
Publisher: International Journal of Photoenergy
Abstract: abstract:The photovoltaic (PV) effects have been investigated and improved using efficient treatments both on single-crystalline (sc) and multi-crystalline (mc) silicon (Si) solar cells. The major effect of forming gas (FG) treatment on solar cell performance is the fill-factor values, which increase 3.75% and 8.28%, respectively, on sc-Si and mc-Si solar cells. As for the optimal 15%-H2 ratio and 40-min FG treatment, the conversion efficiency () values drastically increase to 14.89% and 14.31%, respectively for sc- and mc-Si solar cells. Moreover, we can measure the internal quantum efficiency (IQE) values increase with H2-FG treatment under visible wavelength (400~900 nm) radiation. Thus based on the work in this research, we confirm that H2 passivation has become crucial both in PV as well as in microelectronics fields. Moreover, the developed mc-Si solar cell by proper H2 FG treatment is quite suitable for commercial applications.
URI: http://ntour.ntou.edu.tw/handle/987654321/28461
Appears in Collections:[電機工程學系] 期刊論文

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