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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28444

Title: Electrical Anisotropy of W-Doped ReSe2 Crystals
Authors: Sheng-Yao Hu;C. H. Liang;Kwong-Kau Tiong;Yii-Shing Huang;Y. C. Lee
Contributors: NTOU:Department of Electrical Engineering
Keywords: tungsten;rhenium compounds;chemical vapour deposition;X-ray diffraction;electrical conductivity;Hall effect;magnetic semiconductors;semiconductor doping
Date: 2006
Issue Date: 2011-10-21T02:37:35Z
Publisher: Journal of The Electrochemical Society
Abstract: Abstract:Single crystals of W-doped ReSe2 have been grown by chemical vapor transport process with bromine as the transporting agent. Single crystalline platelets up to 3×3 mm surface area and 100 µm in thickness were obtained. From the X-ray diffraction patterns, the doped crystals are found to crystallize in the triclinic-layered structure. The electrical anisotropy has been investigated along and perpendicular to the b-axis on the van der Waals plane by temperature-dependent conductivity and Hall effect measurements. The influence of the dopant will be compared and discussed.
Relation: 153(8), pp.J100-J102
URI: http://ntour.ntou.edu.tw/handle/987654321/28444
Appears in Collections:[水產養殖學系] 期刊論文
[通訊與導航工程學系] 期刊論文
[電機工程學系] 期刊論文

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