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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28440

Title: Coupling between the exciton and cavity modes in a GaAs∕GaAlAs asymmetric microcavity structure
Authors: D. Y. Lin;Y. H. Chou;Y. S. Huang;K. K. Tiong
Contributors: NTOU:Department of Electrical Engineering
Keywords: gallium arsenide;aluminium compounds;III-V semiconductors;semiconductor quantum wells;microcavities;excitons;piezoreflectance;reflectivity
Date: 2005
Issue Date: 2011-10-21T02:37:35Z
Publisher: Journal of Applied Physics
Abstract: Abstract:The coupling effect between the cavity mode and excitonic states in a GaAs∕GaAlAs asymmetric microcavity structure was studied via angle and temperature dependent reflectance and piezoreflectance (PzR) measurements in the angular range 10°<θinc<60° and temperature range 20 K<T<300 K. The so-called cavity mode (CM) consists of photonic waves confined in the microcavity, and shifts to higher energy with increasing angle or decreasing temperature, whereas the angle independent excitonic states of the quantum well structure shift to higher energy with decreasing temperature. By varying the angle of incidence of the probe beam and temperature, the coupling strength between the excitonic transitions and CM can be tuned. The related PzR features have shown significant enhancement when the cavity mode matches up with the excitonic transitions. A detailed experimental study of the resonance enhancement effect between the excitonic transitions and CM is presented.
Relation: 97(9), pp.3511
URI: http://ntour.ntou.edu.tw/handle/987654321/28440
Appears in Collections:[電機工程學系] 期刊論文

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