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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28426

Title: Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector
Authors: Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
Contributors: NTOU:Department of Electrical Engineering
Keywords: semiconductor heterojunctions;optoelectronic devices;semiconductor switches;electrical resistivity
Date: 2007
Issue Date: 2011-10-21T02:37:32Z
Publisher: Journal of The Electrochemical Society
Abstract: Abstract:In order to achieve high optical sensitivity and low holding power, a wide-gap carrier confinement layer was introduced into the collector region of an n-p-n-heterostructure optoelectronic switch. A similar device without the confinement layer was also fabricated to demonstrate the performance improvement. Both devices were found to have bistable electrical states: a high-impedance OFF state connected to a low-impedance ON state by a region of negative differential resistance. The functional characteristics were based on avalanche multiplication.
Relation: 154(1), pp.H13-H15
URI: http://ntour.ntou.edu.tw/handle/987654321/28426
Appears in Collections:[電機工程學系] 期刊論文

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