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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28402

Title: Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
Authors: Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2005
Issue Date: 2011-10-21T02:37:27Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract:In this paper, extremely high potential barrier height and gate turn-on voltage in an n+/p+/n+/p+/n GaAs field-effect transistor employing double camel-like gate structures are demonstrated. The gate potential barrier height of the double camel-like gate is substantially enhanced by the addition of another n+/p+ layer in the gate region, as compared with the conventional n+/p+/n single camel-like gate structure. The influence of gate structure layers on the depletion depth, potential barrier height, transconductance and gate voltage swing are addressed. Experimental results show that a relatively high gate turn-on voltage up to +4.9 V is realized because two reverse-biased junctions of the double camel-like gate structures absorb part of the positive gate voltage. In addition, an extremely broad gate voltage swing greater than 4.6 V with the transconductance above 100 mS mm−1 is observed. These results indicate that the studied device is suitable for linear and signal amplifiers and inverter circuit applications.
Relation: 21(8), pp.1132-1138
URI: http://ntour.ntou.edu.tw/handle/987654321/28402
Appears in Collections:[電機工程學系] 期刊論文

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