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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27730

Title: Generally applicable self-masked dry etching technique for nanotip array fabrication
Authors: Chih-Hsun Hsu;Hung-Chun Lo;Chia-Fu Chen;Chien Ting Wu;Jih-Shang Hwang;Debajyoti Das;Jeff Tsai;Li-Chyong Chen;Kuei-Hsien Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 2004-03
Issue Date: 2011-10-21T02:33:14Z
Publisher: Nano letters
Abstract: Abstract:Well-aligned nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have nanoscale apexes (1 nm) with high aspect ratios (50), which were achieved by simultaneous SiC nanomask formation and dry etching during ECR plasma process. This technique was applied to a variety of substrates such as silicon, polycrystalline silicon, gallium nitride, gallium phosphide, sapphire, and aluminum, indicating its general applicability. High-resolution transmission electron microscopy and Auger depth profile analyses revealed that the SiC cap, with Si:C ratio of 1:1, exhibited 3C−SiC and 2H−SiC structure on Si and GaP, respectively, with heteroepitaxial relationship. This one-step self-masked dry etching technique enables the fabrication of uniform nanotip arrays on various substrates over large area at low process temperatures, thereby demonstrating a high potential for practical industrial application.
Relation: 4(3), pp.471-475
URI: http://ntour.ntou.edu.tw/handle/987654321/27730
Appears in Collections:[光電科學研究所] 期刊論文

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