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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27729

Title: SiC-capped nanotip arrays for field emission with ultralow turn-on field
Authors: H. C. Lo;D. Das;J. S. Hwang;K. H. Chen;C. H. Hsu;C. F. Chen;L. C. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: silicon compounds;wide band gap semiconductors;silicon;elemental semiconductors;electron field emission;current density;sputter etching;Auger electron spectra;nanostructured materials
Date: 2003-08-18
Issue Date: 2011-10-21T02:33:14Z
Publisher: Applied Physics Letters
Abstract: Abstract:Silicon nanotips with tip diameter and height measuring 1 nm and 1 μm, respectively, and density in the range of 109–3×1011 cm−2, were fabricated monolithically from silicon wafers by electron cyclotron resonance plasma etching technique at a temperature of 200 °C. Field emission current densities of 3.0 mA/cm2 at an applied field of ∼ 1.0 V/μm was obtained from these silicon nanotips. High-resolution transmission electron microscope and Auger electron spectroscopy analyses concluded that the nanotips are composed of monolithic silicon and nanometer-size SiC cap at the top. A 0.35 V/μm turn-on field to draw a 10 μA/cm2 current density was demonstrated, which is much lower than other reported materials. The excellent field emission property demonstrated by these nanotips, which were fabricated by a process integrable to the existing silicon device technology at low temperatures, is a step forward in achieving low-power field emission displays and vacuum electronic devices.
Relation: 83(7), pp.1420-1422
URI: http://ntour.ntou.edu.tw/handle/987654321/27729
Appears in Collections:[光電科學研究所] 期刊論文

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