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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27728

Title: Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Authors: C. H. Liang;L. C. Chen;J. S. Hwang;K. H. Chen;Y. T. Hung;Y. F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: indium compounds;III-V semiconductors;gold;silicon;semiconductor quantum wires;semiconductor growth;Raman spectra;X-ray chemical analysis;scanning electron microscopy;transmission electron microscopy;photoluminescence;interface phonons;vacuum deposition
Date: 2002-07-01
Issue Date: 2011-10-21T02:33:14Z
Publisher: Applied Physics Letters
Abstract: Abstract:This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 μm. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and 579 cm−1, which are attributed to the A1(transverse optical), E2, and A1(longitudinal optical) phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV.
Relation: 81(1), pp.22-24
URI: http://ntour.ntou.edu.tw/handle/987654321/27728
Appears in Collections:[光電科學研究所] 期刊論文

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