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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27727

Title: Resistive Heated MOCVD Deposition of InN Films
Authors: Jih-Shang Hwang;Chung-Han Lee;Fuh-Hsiang Yang;Kuei-Hsien Chen;Luu-Gen Hwa;Ying-Jay Yang;Li-Chyong Chend
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: MOCVD;Optical properties;Nitrides;Electron microscopy
Date: 2001-11-02
Issue Date: 2011-10-21T02:33:13Z
Publisher: Materials Chemistry and Physics
Abstract: Abstract:Indium nitride (InN) film was successfully grown on sapphire (0 0 0 1) substrate using a simple resistive heated metalorganic chemical vapor deposition (MOCVD) system by utilizing a pyrolytic boron nitride (PBN) heater with a precise temperature control within 1°C. Structural studies and optical property measurement by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence of the films were presented. An improved epitaxy was achieved in films grown at a high substrate temperature (540°C). The room temperature photoluminescence spectrum of the InN film showed a strong peak at 1.8 eV. Further high resolution transmission electron microscopy (HRTEM) investigation revealed some inclusion of nanocrystalline phase, which might be responsible for the strong photoluminescence signal.
Relation: 72(2), pp.290-295
URI: http://ntour.ntou.edu.tw/handle/987654321/27727
Appears in Collections:[光電科學研究所] 期刊論文

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