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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27726

Title: High growth rate epitaxy of InN film by a novel-designed MOCVD
Authors: Fuh-Hsiang Yang;Ying-Jay Yang;Ching-Yen Lin;Jih-Hsien Hwang;Chung-Han Lee;Kuei-Hsien Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: Indium nitride;InN;MOCVD;pre-cracking
Date: 2000-07
Issue Date: 2011-10-21T02:33:13Z
Publisher: Proceedings of SPIE - The International Society for Optical Engineering
Abstract: Abstract:Indium nitride (InN) film was successfully grown on the Si(111)substrate. The growth rate of InN film can be enhanced about four times by a novel-designed MOCVD system with a NH3 pre-cracking device, in which the NH3 was fed through a quartz tube passing over a high temperature (650-850 degree(s)C) graphite. A maximum growth rate of about 6 (mu) m/hr in our system was achieved due to high cracking efficiency of NH3. The growth temperature of substrate widely ranged from 350to 600 degree(s)C provides more flexible conditions to improve the film quality. The X-ray diffraction peaks of 31.7 degree(s) and 65.5 degree(s) were obtained from the (0002) and (0004) InN respectively, indicating (0001)-oriented hexagonal InN was epitaxially grown on the silicon(111) substrate.
Relation: 4078, pp.500-506
URI: http://ntour.ntou.edu.tw/handle/987654321/27726
Appears in Collections:[光電科學研究所] 期刊論文

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