Proceedings of SPIE - The International Society for Optical Engineering
Abstract:Indium nitride (InN) film was successfully grown on the Si(111)substrate. The growth rate of InN film can be enhanced about four times by a novel-designed MOCVD system with a NH3 pre-cracking device, in which the NH3 was fed through a quartz tube passing over a high temperature (650-850 degree(s)C) graphite. A maximum growth rate of about 6 (mu) m/hr in our system was achieved due to high cracking efficiency of NH3. The growth temperature of substrate widely ranged from 350to 600 degree(s)C provides more flexible conditions to improve the film quality. The X-ray diffraction peaks of 31.7 degree(s) and 65.5 degree(s) were obtained from the (0002) and (0004) InN respectively, indicating (0001)-oriented hexagonal InN was epitaxially grown on the silicon(111) substrate.