English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2351788      Online Users : 31
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27688

Title: Growth and characterization of GaN films on (0001) sapphire substrates by alternative supply of trimethylgallium and NH3
Authors: H.Y. Wang;S.C. Huang;T.Y. Yan;J.R. Gong;T.Y. Lin;Y.F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: GaN films;Sapphire substrates;Trimethylgallium;NH3
Date: 1999-01-29
Issue Date: 2011-10-21T02:32:52Z
Publisher: Materials Science and Engineering: B
Abstract: Abstract:GaN films were grown on (0001) sapphire substrates in a temperature range of 500∼950°C by exposing the substrates to trimethylgallium (TMG) and NH3 one at a time. High quality GaN films were achieved at 800∼900°C with a thin GaN buffer layer predeposited at 500°C. The linewidth of the (0004) double-crystal rocking curve X-ray diffraction (DCXRD) of a 2.0 μm thick GaN film is about 250∼500 arcsec. Increment in growth temperature over a temperature range of 800∼900°C is helpful to suppress the intensity of yellow luminescence and to enhance the luminescence intensity of the near band-to-band emission. Typically, the room temperature photoluminescence intensity ratio of the near band edge emission to the yellow luminescence for an as-grown high quality GaN film is more than one order of magnitude. The best GaN films with superior optical behavior were achieved at ∼900°C with a V/III ratio of 5000. Photoluminescence measurements of these GaN films at 9 K show strong and sharp near band-to-band emission with almost no yellow luminescence.
Relation: 57(3), pp.218-223
URI: http://ntour.ntou.edu.tw/handle/987654321/27688
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

There are no files associated with this item.



All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback