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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27688

Title: Growth and characterization of GaN films on (0001) sapphire substrates by alternative supply of trimethylgallium and NH3
Authors: H.Y. Wang;S.C. Huang;T.Y. Yan;J.R. Gong;T.Y. Lin;Y.F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: GaN films;Sapphire substrates;Trimethylgallium;NH3
Date: 1999-01-29
Issue Date: 2011-10-21T02:32:52Z
Publisher: Materials Science and Engineering: B
Abstract: Abstract:GaN films were grown on (0001) sapphire substrates in a temperature range of 500∼950°C by exposing the substrates to trimethylgallium (TMG) and NH3 one at a time. High quality GaN films were achieved at 800∼900°C with a thin GaN buffer layer predeposited at 500°C. The linewidth of the (0004) double-crystal rocking curve X-ray diffraction (DCXRD) of a 2.0 μm thick GaN film is about 250∼500 arcsec. Increment in growth temperature over a temperature range of 800∼900°C is helpful to suppress the intensity of yellow luminescence and to enhance the luminescence intensity of the near band-to-band emission. Typically, the room temperature photoluminescence intensity ratio of the near band edge emission to the yellow luminescence for an as-grown high quality GaN film is more than one order of magnitude. The best GaN films with superior optical behavior were achieved at ∼900°C with a V/III ratio of 5000. Photoluminescence measurements of these GaN films at 9 K show strong and sharp near band-to-band emission with almost no yellow luminescence.
Relation: 57(3), pp.218-223
URI: http://ntour.ntou.edu.tw/handle/987654321/27688
Appears in Collections:[光電科學研究所] 期刊論文

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