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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27687

Title: Pulsed laser deposition of GaNxAs1-x on GaAs
Authors: W. K. Hung;M. Y. Chern;J. C. Fan;T. Y. Lin;Y. F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: laser deposition;gallium arsenide;nitrogen compounds;epitaxial growth;X-ray diffraction;energy gap;photoconductivity;optical properties
Date: 1999-06-28
Issue Date: 2011-10-21T02:32:52Z
Publisher: Applied Physics Letters
Abstract: Abstract:Epitaxial layers of GaNxAs1−x were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia (NH3) atmosphere. High-resolution x-ray diffraction indicates the existence of a threshold NH3 pressure, above which the incorporated N content x increases linearly with increasing NH3 pressure. The band-gap dependence of GaNxAs1−x on x for x ⩽ 2.9% is examined by optical absorption and photoconductivity measurements at room temperature. We found that the band-gap energy reduces with higher N composition, and our results agree approximately with the prediction based on the dielectric model.
Relation: 74(26), pp.3951-3953
URI: http://ntour.ntou.edu.tw/handle/987654321/27687
Appears in Collections:[光電科學研究所] 期刊論文

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