English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2323722      Online Users : 68
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27687

Title: Pulsed laser deposition of GaNxAs1-x on GaAs
Authors: W. K. Hung;M. Y. Chern;J. C. Fan;T. Y. Lin;Y. F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: laser deposition;gallium arsenide;nitrogen compounds;epitaxial growth;X-ray diffraction;energy gap;photoconductivity;optical properties
Date: 1999-06-28
Issue Date: 2011-10-21T02:32:52Z
Publisher: Applied Physics Letters
Abstract: Abstract:Epitaxial layers of GaNxAs1−x were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia (NH3) atmosphere. High-resolution x-ray diffraction indicates the existence of a threshold NH3 pressure, above which the incorporated N content x increases linearly with increasing NH3 pressure. The band-gap dependence of GaNxAs1−x on x for x ⩽ 2.9% is examined by optical absorption and photoconductivity measurements at room temperature. We found that the band-gap energy reduces with higher N composition, and our results agree approximately with the prediction based on the dielectric model.
Relation: 74(26), pp.3951-3953
URI: http://ntour.ntou.edu.tw/handle/987654321/27687
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML264View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback