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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27684

Title: Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3
Authors: Jyh-Rong Gong;Cheng-Long Yeh;Yu-Li Tsai;Cheng-Liang Wang;Tai-Yuan Lin;Wen-How Lan;Yuh-Der Shiang;Ya-Tung Cherng
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: AlN/GaN;Threading dislocations
Date: 2002-06-01
Issue Date: 2011-10-21T02:32:51Z
Publisher: Materials Science and Engineering: B(Mater. Sci. Eng.B)
Abstract: Abstract:A series of AlN/GaN strained multi-layers having various thicknesses were grown either at low or high temperatures by an alternate supply of trimethylaluminum (TMA) and ammonia (NH3) or trimethylgallium (TMG) and NH3. Transmission electron microscopic (TEM) observations show that uniform AlN/GaN superlattices and multi-layers were achieved at high and low temperatures. These AlN/GaN multi-layers were observed to block the threading dislocations effectively for certain thicknesses and growth temperature. AlN/GaN (5 nm/5 nm) strained multi-layers deposited at 1050 °C right above the low temperature AlN buffer layers appear to reduce the density of threading dislocations in the high temperature (HT) GaN film grown subsequently. In particular, an insertion of low temperature (LT) pseudomorphic AlN/GaN strained multi-layers inside the HT-GaN film stops the propagation of threading dislocations very efficiently.
Relation: 94(2-3), pp.155-158
URI: http://ntour.ntou.edu.tw/handle/987654321/27684
Appears in Collections:[光電科學研究所] 期刊論文

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