English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2357070      Online Users : 35
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27682

Title: Piezoelectric, electro-optical, and photoelastic effectsin InxGa1-xN/GaN multiple quantum wells
Authors: C. H. Chen;W. H. Chen;Y. F. Chen;T. Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: indium compounds;gallium compounds;III-V semiconductors;wide band gap semiconductors;semiconductor quantum wells;photoluminescence;Raman spectra;electro-optical effects;red shift;spectral line shift;refractive index;piezoelectric semiconductors;photoelasticity
Date: 2003-09-01
Issue Date: 2011-10-21T02:32:50Z
Publisher: Applied Physics Letters(Appl. Phys.Lett.)
Abstract: Abstract:We present microphotoluminescence (PL) and micro-Raman measurements with varying the applied electric field in InxGa1−xN/GaN multiple quantum wells (MQWs). The InGaN A1(LO) phonon was found to show a redshift in frequency with the increase of applied electric field. And, a blueshift in PL spectra has been observed when the applied electric field was increased. Quite interestingly, the change in the refractive index was also observed, which was determined accurately from the interference pattern shown in the emission spectra. This finding correlates very well with the blueshift of PL spectra and the redshift of the InGaN A1(LO) phonon. Based on the stress change induced by the compensation between piezoelectric and external fields, our results firmly establish that strong electro-optical and photoelastic effects do exist in InxGa1−xN/GaN MQWs, which is important in the design of optoelectronic devices.
Relation: 83(9), pp.1770-1772
URI: http://ntour.ntou.edu.tw/handle/987654321/27682
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML201View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback