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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27680

Title: In-rich In1-xGaxN films by metal-organic vapor phase epitaxy
Authors: Chin-An Chang;Chuan-Feng Shih;Nai-Chuan Chen;T. Y. Lin;Kuo-Shiun Liu
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: indium compounds;gallium compounds;III-V semiconductors;wide band gap semiconductors;semiconductor thin films;semiconductor growth;vapour phase epitaxial growth;MOCVD;lattice constants;surface morphology;electron mobility;carrier density;photoluminescence;X-ray photoelectron spectra;binding energy
Date: 2004-12-20
Issue Date: 2011-10-21T02:32:49Z
Publisher: Applied Physics Letters
Abstract: Abstract:Single crystalline In1−xGaxN films containing high In content (70%–100%) were grown by metalorganic vapor phase epitaxy. A linear relation was observed between the lattice constants and gas phase Ga∕In ratios. The surface morphology changed from pyramid for InN to more planar ones for the InGaN alloys with increasing Ga content. The electron mobility decreased rapidly from 1200 cm2∕V s for InN to less than 100 cm2∕V s for In0.7Ga0.3N, with a carrier concentration of low- 1019 cm−3 for all the as-grown films. Using photoluminescence a single emission peak was observed at 1.4–1.6 μm for the In-rich InGaN with decreasing wavelengths up to below 20% of Ga. Two peaks were observed for the In0.80Ga0.20N, however, indicating possible phase separation. The x-ray photoelectron spectroscopic measurement showed shifts to higher binding energies for both In and Ga with increasing Ga content. The estimated alloy composition, however, depended sensitively on the sputtering conditions of the samples.
Relation: 85(25), pp.6131-6133
URI: http://ntour.ntou.edu.tw/handle/987654321/27680
Appears in Collections:[光電科學研究所] 期刊論文

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