Abstract:The lateral growth of high quality InN on the stripe-pattern GaN/sapphire substrate with an OMVPE system was studied. The surface morphology and structural properties were investigated. Epitaxial films were achieved due to the greatly reduced strain by lateral growth. Two kinds of growth mode were observed due to different growth conditions of V/III ratios. X-ray rocking curve with FWHM of 700 arcsec shows the good quality of the film and E2 mode of Raman spectrum with FWHM of 3.5 cm-1 is among the best results ever reported in the literature.