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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27673

Title: Lateral growth of InN on GaN/sapphire
Authors: Fuh-Hsiang Yang;Jih-Hsien Hwang;Kuei-Hsien Chen;Ying-Jay Yang
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 2002
Issue Date: 2011-10-21T02:32:46Z
Publisher: Material Research Society Symposium Proceeding
Abstract: Abstract:The lateral growth of high quality InN on the stripe-pattern GaN/sapphire substrate with an OMVPE system was studied. The surface morphology and structural properties were investigated. Epitaxial films were achieved due to the greatly reduced strain by lateral growth. Two kinds of growth mode were observed due to different growth conditions of V/III ratios. X-ray rocking curve with FWHM of 700 arcsec shows the good quality of the film and E2 mode of Raman spectrum with FWHM of 3.5 cm-1 is among the best results ever reported in the literature.
Relation: 693, pp.I3.54.1-I3.54.6
URI: http://ntour.ntou.edu.tw/handle/987654321/27673
Appears in Collections:[光電科學研究所] 期刊論文

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