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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27672

Title: Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
Authors: Fu-Hsiang Yang;Jih-Sheng Hwang;Ying-Jay Yang;Kuei-Hsien Chen;Jih-Hsiang Wang
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 2002-03-15
Issue Date: 2011-10-21T02:32:45Z
Publisher: Japanese Journal of Applied Physics
Abstract: Abstract:The effects of reactant-gas velocity on the growth of InN on GaN/sapphire substrate by organometallic vapor-phase epitaxy (OMVPE) were studied. With a high-speed reactant gas, the thickness of the stagnant layer is reduced so that the reactant species can reach the surface effectively. A layerlike growth of InN was achieved, resulting in a marked improvement of the film quality. In addition, significant enhancement of the growth rate up to 2 µm/h was obtained. The full-width at half maximum (FWHM) of the X-ray rocking curve (XRC) decreased with increasing gas velocity. A 476 arcsec width of XRC was reproducibly achieved, indicating high-quality InN epitaxial films. A Hall mobility of 250 cm2/V-s with a carrier concentration of 1×1019 cm-3 at room temperature was obtained on a 0.5-µm-thick InN film.
Relation: 41(3A), pp.L1321-L1324
URI: http://ntour.ntou.edu.tw/handle/987654321/27672
Appears in Collections:[光電科學研究所] 期刊論文

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