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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27671

Title: High Growth Rate Deposition of Oriented Hexagonal InN Films
Authors: Fuh-Hsiang Yang;Jih-Shang Hwang;Kuei-Hsien Chen;Ying-Jay Yang;Tzung-Han Lee;Luu-Gen Hwa;Li-Chyong Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: Indium nitride;Nanostructures;MOCVD;Raman;TEM
Date: 2002-02-22
Issue Date: 2011-10-21T02:32:45Z
Publisher: Thin Solid Films
Abstract: Abstract:Highly oriented nanocrystalline indium nitride (InN) films were successfully grown on Si(111) substrate. The growth rate of InN film can be enhanced fourfold by a double-zone metal organic chemical vapor deposition system consisting of a high temperature NH3 pre-cracking zone and a low temperature deposition zone. A maximum growth rate of 6 μm/h was achieved due to the high cracking efficiency of NH3. Meanwhile, the growth temperature of the substrate can be varied from 350 to 600 °C, which provides more flexibility for the film structure. While X-ray diffraction revealed the (0001) texture of the film, the high-resolution transmission electron microscopy study concluded the growth of highly oriented nanocrystalline hexagonal InN, which may lead to potential solar cell and optoelectronic applications.
Relation: 405(1-2), pp.194-197
URI: http://ntour.ntou.edu.tw/handle/987654321/27671
Appears in Collections:[光電科學研究所] 期刊論文

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