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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27669

Title: Improving Performance of InGaN/GaN Light Emitting Diodes and GaAs Solar Cells Using luminescent Gold Nanoclusters
Authors: M. D. Yang;S.W.Wu;G.W. Shu;J. S.Wang;J. L. Shen;C. H.Wu;C. A. J. Lin;W. H. Chang;T. Y. Lin;T. C. Lu;H. C. Kuo
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 2009
Issue Date: 2011-10-21T02:32:44Z
Publisher: Journal of Nanomaterials
Abstract: Abstract:We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells.
Relation: 2009, pp.840791
URI: http://ntour.ntou.edu.tw/handle/987654321/27669
Appears in Collections:[光電科學研究所] 期刊論文

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