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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27668

Title: Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition
Authors: Yen-Chin Huang;Zhen-Yu Li;Li-Wei Weng;Wu-Yih Uen;Shan-Ming Lan;Sen-Mao Liao;Tai-Yuan Lin;Yu-Hsiang Huang;Jian-Wen Chen;Tsun-Neng Yang;Chin-Chen Chiang
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: crystal microstructure;crystal orientation;electrical resistivity;gallium;II-VI semiconductors;MOCVD;photoluminescence;scanning electron microscopy;semiconductor doping;semiconductor thin films;spectral line broadening;spectral line shift;wide band gap semiconductors;X-ray diffraction;zinc compounds
Date: 2009-11
Issue Date: 2011-10-21T02:32:43Z
Publisher: Journal of Vacuum Science & Technology A
Abstract: Abstract:Gallium-doped ZnO films were grown on p-Si(111) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as a n-type dopant gas. The structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56 to 3.35 μmol/min were examined. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga doping plays a role in forming microstructures in ZnO films. A flat surface with a predominant orientation (101) was obtained for the ZnO:Ga film fabricated at a flow rate of TEG = 2.79 μmol/min. This film also revealed a lowest resistivity of 4.54×10−4 Ω cm, as measured using the van der Pauw method. Moreover, low temperature photoluminescence (PL) emission recorded at 12 K demonstrated the Burstein Moss shift of PL line from 3.365 to 3.403 eV and a line broadening from 100 to 165 meV as the TEG flow rate varied from 0.56 to 2.79 μmol/min. This blueshift behavior of PL spectra from ZnO:Ga films features the degeneracy of semiconductor, which helps to recognize the enhancing of transparency and conductivity of ZnO films fabricated by AP-MOCVD using Ga-doping technique.
Relation: 27(6), pp.1260-1265
URI: http://ntour.ntou.edu.tw/handle/987654321/27668
Appears in Collections:[光電科學研究所] 期刊論文

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