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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27666

Title: Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
Authors: G.W. Shu;J.S. Wang;J.L. Shen;R.S. Hsiao;J.F. Chen;T.Y. Lin;C.H. Wu;Y.H. Huang;T.N. Yang
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: InAs;Quantum dots;Photoluminescence
Date: 2010-01-15
Issue Date: 2011-10-21T02:32:42Z
Publisher: Materials Science and Engineering: B
Abstract: Abstract:Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement.
Relation: 166(1), pp.46-49
URI: http://ntour.ntou.edu.tw/handle/987654321/27666
Appears in Collections:[光電科學研究所] 期刊論文

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