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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27594

Title: Magnetic-field-induced anomalous phase transition in p-type Si/SiGe heterojunctions
Authors: T Y Lin;M S Tsai;Y F Chen;F F Fang
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 1998-11-02
Issue Date: 2011-10-21T02:32:17Z
Publisher: Journal of Physics: Condensed Matter
Abstract: Abstract:We present the low-temperature magneto-transport measurements on a twodimensional hole gas in the p-type modulation doped SiGe alloy confined by an Si barrier. We observe a magnetic-field-induced transition which occurs at high magnetic fields from an integer quantum Hall phase to a Hall insulator phase and finally reenters to a  D 1 integer quantum Hall phase. This Hall insulator is centred at  D 1:5 which is unanticipated by the global phase diagram. Scaling analysis and universal phenomena are found to be different at the two transition points. These results are attributed to the unusual energy level scheme in p-SiGe.
Relation: 10(43), pp.9691-9699
URI: http://ntour.ntou.edu.tw/handle/987654321/27594
Appears in Collections:[光電科學研究所] 期刊論文

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