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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27593

Title: Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures
Authors: T. Y. Lin;H. M. Chen;M. S. Tsai;Y. F. Chen;F. F. Fang;C. F. Lin;G. C. Chi
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 1998-11-15
Issue Date: 2011-10-21T02:32:16Z
Publisher: Physical Review B
Abstract: Abstract:We present results of electrical and optical measurements in an AlxGa1-xN/GaN heterostructure. The presence of a two-dimensional electron gas at the high-quality AlxGa1-xN/GaN heterointerface is confirmed by Shubnikov–de Haas measurement, which shows well-resolved magnetoresistance oscillations starting in fields below 3 T at 1.3 K. From the temperature dependence of the oscillation amplitude, the obtained effective mass (0.24±0.02)m0 is in excellent agreement with the value of cyclotron resonance measurements in two-dimensional (2D) systems, but larger than the values of theoretical and experimental results in GaN bulk films. We point out that the effective-mass enhancement in 2D systems is due to the effects of band nonparabolicity and wave-function penetration into the barrier material. The results of photoconductivity measurements reveal that persistent photoconductivity (PPC) does exist in the AlxGa1-xN/GaN heterostructure, and that the PPC behavior of AlxGa1-xN/GaN heterojunction is quite different from that of the GaN epitaxial thin films. A possible mechanism is presented to interpret the observed PPC effect. PACS: 73.40.Lq, 73.50.Gr, 73.50.Pz, 73.61.Ey
Relation: 58(20), pp.13793-13798
URI: http://ntour.ntou.edu.tw/handle/987654321/27593
Appears in Collections:[光電科學研究所] 期刊論文

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