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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27592

Title: Effects of alloy potential fluctuations in InGaN epitaxial films
Authors: T. Y. Lin;J. C. Fan;Y. F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films
Date: 1999-05
Issue Date: 2011-10-21T02:32:16Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract:Results of photoluminescence and photoconductivity measurements in epitaxial films are presented. The photoluminescence peak energy and intensity show several anomalous behaviours. The peak energy changes with temperature exhibiting an inverted S-shape dependence, where it decreases, then increases with increasing temperature in the range 40-100 K and finally decreases with increasing temperature. The intensity shows a temperature dependence similar to that of amorphous semiconductors and disordered superlattices. A blue shift of the photoluminescence energy with increasing excitation intensity is observed. A large Stokes shift between the photoluminescence peak position and the band edge transition energy is found; it decreases with decreasing indium content. A persistent photoconductivity effect has been detected up to room temperature with a stretched-exponential function for its decay rate. All these observations can be explained in a consistent way by alloy potential fluctuations, and these clearly indicate the existence of compositional fluctuations. These two related effects thus appear to constitute the mechanism for the widely observed localized excitons in InGaN-based devices.
Relation: 14(5), pp.406-411
URI: http://ntour.ntou.edu.tw/handle/987654321/27592
Appears in Collections:[光電科學研究所] 期刊論文

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