English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27308/39152
Visitors : 2447763      Online Users : 37
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27592

Title: Effects of alloy potential fluctuations in InGaN epitaxial films
Authors: T. Y. Lin;J. C. Fan;Y. F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films
Date: 1999-05
Issue Date: 2011-10-21T02:32:16Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract:Results of photoluminescence and photoconductivity measurements in epitaxial films are presented. The photoluminescence peak energy and intensity show several anomalous behaviours. The peak energy changes with temperature exhibiting an inverted S-shape dependence, where it decreases, then increases with increasing temperature in the range 40-100 K and finally decreases with increasing temperature. The intensity shows a temperature dependence similar to that of amorphous semiconductors and disordered superlattices. A blue shift of the photoluminescence energy with increasing excitation intensity is observed. A large Stokes shift between the photoluminescence peak position and the band edge transition energy is found; it decreases with decreasing indium content. A persistent photoconductivity effect has been detected up to room temperature with a stretched-exponential function for its decay rate. All these observations can be explained in a consistent way by alloy potential fluctuations, and these clearly indicate the existence of compositional fluctuations. These two related effects thus appear to constitute the mechanism for the widely observed localized excitons in InGaN-based devices.
Relation: 14(5), pp.406-411
URI: http://ntour.ntou.edu.tw/handle/987654321/27592
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback