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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27591

Title: Studies of far-infrared magneto-photoconductivity of D− centers in GaAs/AlxGa1−xAs multiple quantum wells
Authors: J. L. Shen;T. Y. Lin;Y. F. Chen;Y. H. Chang
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: A. Quantum wells;C. Impurities in semiconductors;D. Optical properties
Date: 1999-11-09
Issue Date: 2011-10-21T02:32:16Z
Publisher: Solid State Communications
Abstract: Abstract:We present magneto-photoconductivity studies on GaAs/Al0.3Ga0.7As multiple quantum wells selectively doped with Si donors in the center of the wells and in the barrier layers. Under extra illumination of an He–Ne laser, dramatic results of the D− centers were observed as a function of the electron density. A band-bending model associated with a “barrier D− center” configuration was used to analyze the evolution of the binding energy of the spin-singlet D− transition and magnetic vaporization.
Relation: 112(12), pp.675-680
URI: http://ntour.ntou.edu.tw/handle/987654321/27591
Appears in Collections:[光電科學研究所] 期刊論文

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