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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27589

Title: Exciton localization and the Stokes shift in undoped InGaN/GaN multi-quantum wells
Authors: Y. F. Chen;T. Y. Lin;H. C. Yang
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 2000
Issue Date: 2011-10-21T02:32:15Z
Publisher: Proc. SPIE
Abstract: Abstract:Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the first observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide an unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.
Relation: 3938, PP.137
URI: http://ntour.ntou.edu.tw/handle/987654321/27589
Appears in Collections:[光電科學研究所] 期刊論文

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